Integrated Nanosystems Research Facility

XeF2 Pulsing Etcher

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This tool uses XeF2 crystals and a vacuum chamber to produce fluorine vapors which isotropically etch silicon with very high selectivities to photoresist, oxides, nitrides and many metals. Typical silicon etch rates are 1-2um per minute. Samples up to 4 inch diameter can be accommodated and the etch process may be observed through the transparent chamber lid.