The all aluminum chamber features over 240 square inches of active processing surface with the three level standard configuration. The clean design features an industrial powder coated frame to guard your processing environment from contamination.
When using the PE-100 as Reactive Ion Etch the electrodes are specially designed for directional plasma, which means the plasma contacts the substrates in a downward flow or drilling effect. This process is primarily used for drilling microvias or cleaning of small variations that are unattainable with chemicals since liquid flow is often restricted in these small spaces, such as vias.
Applications include medical devices, solar cells, printed circuit boards, connectors, MEMs, nanotechnology, wafer level packaging as well as many other related semiconductor processes.
Cleaning with Plasma yields increased uniformity of any surface treated and reduces or eliminates unwanted and often expensive chemical waste. Operation is through a simple to use, intuitive touch screen interface and offer safe and repeatable processes. We offer custom electrode configurations including RIE (Reactive Ion Etch) and process temperature control.
Standard System Features
Welded Aluminum Vacuum Chamber
Three 9” wide x 13” deep electrode “shelves” on 3” spacing
300 Watt RF generator @ 100khz
One O-50cc Mass Flow Controller
Pirini Vacuum Gauge. Range 0-1 Torr
Microprocessor Control System with Touch Screen, single process
Vacuum Pump, Oxygen Service 8 CFM
8 CFM Oxygen service Vacuum pump with mist eliminator
Optional System Features
300 Watt Generator @ 13.56 MHZ
Electrostatic Shielding of chamber
Process Temperature Control
Custom Electrode configurations
RIE (Reactive Ion Electrode)
Nitrogen or CDA Purge on Vacuum pump
Plasma Console 17 “ X 28” X 30” / 160lbs
Vacuum Pump 6 “ X 18” X 9” / 68lbs
AC Service, 120 vac 60 Hz 15A or 220 vac 50 Hz 13A
Compressed Air Service 80-100 PSI 0.5 CFM
Regulated Process Gases 15 PSI, Two stage regulator
Less than 85°F Non-Condensing